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 RB548W
Diodes
Schottky barrier diode
RB548W
Application Rectifying small power External dimensions (Units : mm)
1.60.2 1.00.1 +0.1 0.2 -0.05 (1) 0.5 0.5 (2) +0.1 0.2 -0.05
0.80.1 1.60.2
0.70.1 0.550.1
+0.1 0.3 -0.05
0.150.05
Construction Silicon epitaxial planer
ROHM : EMD3 EIAJ : JEDEC :
Circuit
(1) K (2) A
(3) A, K
Absolute maximum ratings*i Ta=25C*j
Parameter Reverse voltage (DC) Average rectified forward current Forward current surge peak Junction temperature Storage temperature
1 Rating of per diode 2 60Hz, 1cyc. Rating of per diode 2 1
Symbol VR IO IFSM Tj Tstg
Limits 30 100 0.5 125 -40 to +125
Unit V mA mA
C C
Electrical characteristics*i Ta=25C*j
Parameter Forward voltage Reverse current Symbol VF IR Min. - - Typ. - - Max. 0.450 0.5 Unit V A IF=10mA VR=10V Conditions
Please pay attention to static electricity when handling.
0.1Min.
(3)
3V
Features 1) Extra small mold type. (EMD3) 2) High reliability.
0~0.1
1/2
RB548W
Diodes
Electrical characteristic curves*i Ta=25C*j
100
125C
1000
125C
CAPACITANCE BETWEEN TERMINALS :CT (pF)
100
FORWARD CURRENT : IF (mA)
10
75C 25C
REVERSE CURRENT : IR (A)
100 10 1
25C 75C
f=1.0MHz OSC=20mV BIAS=VR
1
-25C
10
0.1 0.01 0.001
-25C
0.1
0.01 0
200
400
600
0.0001 0
10
20
30
40
1 0
10
20
30
40
FORWARD VOLTAGE : VF (mV)
REVERSE VOLTAGE : VR (V)
REVERSE VOLTAGE : VR (V)
Fig. 1 Foward characteristics
Fig. 2 Reverse characteristics
Fig. 3 Capacitance between terminals characteristics
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0


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